Abstract Herein this paper, morphological, electrical and optical (UV) characteristics are explored for ZnO/n-Si based different contact material Schottky heterojunctions through simulations and fabrication. The electron major ZnO crystalline thin films were deposited using RF-sputtering technique on n-type Si wafers. The structural and morphological properties of sputtered ZnO thin film was studied through tapping mode atomic force microscopy (AFM), and scanning electron microscopy (SEM). The electrical characterization of fabricated Schottky structures involved measuring of current-voltage characteristics for different temperatures ranging from 300 K to 400 K. Capacitance-voltage characteristics for fabricated Schottky heterojunctions were measured to estimate barrier height ( φ B ). The effect of temperature on ideality factor (η) and series resistance was also studied for Pd, Au and Pt Schottky heterojunctions. Increasing the lattice temperature from 300 K to 400 K led to gradual decrease in η and series resistance. Pt–ZnO shows the best Schottky behavior with experimental values of rectification ratio of 3.95 × 10 3 followed by 2.25 × 10 2 and 1.5 × 10 2 for Au and Pd respectively at V anode = ± 5 V . The current characteristics of fabricated Schottky structures were studied using 365 nm wavelength UV illumination source for observing detectivity (D) and responsivity (R). Best responsivity and D values were obtained for Pt/ZnO/Si and found to be 0.32 A / W and 4.12 × 10 9 mHz 1 2 / W followed by Au, and Pd. Pt based Schottky structure shows the fastest response to 365 nm UV light illumination with response time ( t r ) of 25 ms and recovery time ( t d ) of 48 ms The obtained values for figure of merits favor the idea of using Schottky junctions for optoelectronic applications.

中文翻译：

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(Pt,Au,Pd)/ZnO/n-Si/Al 肖特基结构在不同温度和紫外线照射条件下的性能表征

摘要在本文中，通过模拟和制造探索了基于 ZnO/n-Si 的不同接触材料肖特基异质结的形态、电学和光学 (UV) 特性。使用射频溅射技术在 n 型硅晶片上沉积电子主 ZnO 晶体薄膜。通过轻敲模式原子力显微镜 (AFM) 和扫描电子显微镜 (SEM) 研究了溅射 ZnO 薄膜的结构和形态特性。制造的肖特基结构的电气特性包括测量 300 K 至 400 K 不同温度下的电流-电压特性。测量制造的肖特基异质结的电容-电压特性以估计势垒高度 (φ B)。还研究了温度对 Pd、Au 和 Pt 肖特基异质结的理想因子 (η) 和串联电阻的影响。将晶格温度从 300 K 增加到 400 K 导致 η 和串联电阻逐渐降低。Pt-ZnO 表现出最好的肖特基行为，实验值的整流比为 3.95 × 10 3 ，其次是 2.25 × 10 2 和 1.5 × 10 2 对于 Au 和 Pd，V 阳极 = ± 5 V。使用 365 nm 波长紫外照明光源研究了制造的肖特基结构的电流特性，以观察探测率 (D) 和响应率 (R)。获得了 Pt/ZnO/Si 的最佳响应度和 D 值，发现为 0.32 A / W 和 4.12 × 10 9 mHz 1 2 / W，其次是 Au 和 Pd。