In this study, the Cr₂S₃-based thin films were successfully prepared by a simple chemical spray pyrolysis method. The effect of Sn²⁺ incorporation at different contents (0 ≤ Sn²⁺ ≤ 0.25 mol) on the microstructural, optical, and optoelectrical properties of the thin films was investigated. The formation of high purity Cr₂S₃ and Sn-doped Cr₂S₃ thin films with a rhombohedral crystalline phase was confirmed by the grazing X-ray diffraction results and energy dispersive X-ray analysis. The surface morphology and roughness of thin films were observed using scanning electron microscopy. The optical band gap energy and width of the Urbach tail were evaluated as a function of Sn²⁺ doping from the optical absorption coefficient of the samples. By increasing the Sn²⁺ content, a considerable narrowing of about 0.5 eV was observed in the optical band gap energy; while the Urbach energy was found to gradually increase up to 0.992 eV for the sample containing a high-content of Sn²⁺. A linear relationship between the optical band gap and Urbach energies was also proposed. Finally, the effect of optically changes on the photosensing performance and time-response switching of the pure Cr₂S₃ and Sn-doped Cr₂S₃ thin films was studied for the first time, in which the photosensitivity of the samples enhanced over 25 times, as the content of Sn²⁺ increased into the Cr₂S₃ host structure.

在这项研究中，通过简单的化学喷雾热解方法成功制备了Cr ₂ S ₃基薄膜。Sn的效果²⁺在不同的内容（0≤掺入的Sn ²⁺  ≤0.25摩尔）在微观结构，光学和薄膜的光电特性进行了研究。高纯Cr ₂ S ₃和Sn掺杂Cr ₂ S _3的形成X射线衍射结果和能量色散X射线分析证实了具有菱面体结晶相的薄膜。使用扫描电子显微镜观察薄膜的表面形态和粗糙度。根据样品的光吸收系数，评估了Sn ²⁺掺杂对Urbach尾巴的光学带隙能量和宽度的影响。通过增加Sn ^2+的含量，在光学带隙能量中观察到大约0.5 eV的相当大的缩窄。而对于含高含量Sn ²⁺的样品，发现Urbach能量逐渐增加至0.992 eV。还提出了光学带隙与Urbach能量之间的线性关系。最后，首次研究了光学变化对纯Cr ₂ S ₃和掺Sn的Cr ₂ S ₃薄膜的光敏性能和时间响应转换的影响，其中样品的光敏性提高了25随着Sn ^2+含量增加到Cr ₂ S ₃主体结构中，Sn^含量增加。