The charge transport mechanism in thick film (~ 100 nm) amorphous boron nitride (a-BN) was studied experimentally and theoretically. Applying the experiments on the injection of minor carriers of n- and p-type silicon, the contribution of electrons and holes to the a-BN conductivity in the Si/BN/Al structure was determined. It was established that electrons and holes contribute to the a-BN conductivity, i.e. the a-BN conductivity is two-band. In a broad range of electric fields and temperatures, the charge transport in a-BN is satisfactorily described in the framework of the multiphonon trap ionization theory with thermal W_T = 1.0 eV and optical Wopt = 2.0 eV trap ionization energies, respectively.

通过实验和理论研究了厚膜（约100 nm）非晶氮化硼（a-BN）中的电荷传输机理。施加n的少数载流子的注入实验-和p型硅，电子和空穴的在所述Si / BN /铝结构中的贡献对一个-BN电导率进行了测定。已经确定，电子和空穴有助于a-BN的导电性，即，a-BN的导电性是两个频带。在宽范围的电场和温度下，在多声子陷阱电离理论的框架中分别以热W _T  = 1.0 eV和光学Wopt  = 2.0 eV陷阱电离能来令人满意地描述a-BN中的电荷传输。