By profiling the electrical parameters of the arsenic implanted CdHgTe films, grown by molecular beam epitaxy, and comparing the obtained data with the results of studies performed by secondary ion mass spectroscopy and transmission electron microscopy, the localization and nature of donor defects formed during implantation were determined. It has been shown that such defects are dislocation loops and quasi-point defects that trap interstitial mercury atoms released during implantation.

中文翻译：

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MBE 生长的砷植入 Cdhgte 薄膜中辐射供体缺陷的定位和性质

通过分析分子束外延生长的砷注入 CdHgTe 薄膜的电参数，并将获得的数据与二次离子质谱和透射电子显微镜的研究结果进行比较，注入过程中形成的供体缺陷的定位和性质是决定。已经表明，这种缺陷是位错环和准点缺陷，它们捕获在注入过程中释放的间隙汞原子。