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Room-Temperature Quantum Emitter in Aluminum Nitride.
ACS Photonics ( IF 6.5 ) Pub Date : 2020-06-11 , DOI: 10.1021/acsphotonics.0c00528
Sam G Bishop 1 , John P Hadden 1 , Faris D Alzahrani 1 , Reza Hekmati 1 , Diana L Huffaker 1 , Wolfgang W Langbein 1 , Anthony J Bennett 1
Affiliation  

A device that is able to produce single photons is a fundamental building block for a number of quantum technologies. Significant progress has been made in engineering quantum emission in the solid state, for instance, using semiconductor quantum dots as well as defect sites in bulk and two-dimensional materials. Here we report the discovery of a room-temperature quantum emitter embedded deep within the band gap of aluminum nitride. Using spectral, polarization, and photon-counting time-resolved measurements we demonstrate bright (>105 counts s–1), pure (g(2)(0) < 0.2), and polarized room-temperature quantum light emission from color centers in this commercially important semiconductor.

中文翻译:


氮化铝室温量子发射器。



能够产生单光子的设备是许多量子技术的基本构建模块。例如,利用半导体量子点以及块体和二维材料中的缺陷位点,在固态量子发射方面取得了重大进展。在这里,我们报告了嵌入氮化铝带隙深处的室温量子发射器的发现。使用光谱、偏振和光子计数时间分辨测量,我们展示了来自色心的明亮(>10 5计数 s –1 )、纯( g (2) (0) < 0.2)和偏振室温量子光发射在这种商业上重要的半导体中。
更新日期:2020-07-15
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