Large Electromechanical Responses Driven by Electrically Induced Dense Ferroelastic Domains: Beyond Morphotropic Phase Boundaries,ACS Applied Electronic Materials

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Large Electromechanical Responses Driven by Electrically Induced Dense Ferroelastic Domains: Beyond Morphotropic Phase Boundaries
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2020-06-12 , DOI: 10.1021/acsaelm.0c00220
Mitsumasa Nakajima ₁ , Takao Shimizu _{2,

3} , Hiroshi Nakaki ₁ , Tomoaki Yamada _{1,

4,

5} , Ayumi Wada ₁ , Takaaki Nakashima ₁ , Yoshitaka Ehara _{1,

6} , Hiroshi Funakubo _{1,

2}

Affiliation

Piezoelectric materials based on ferroelectrics with a perovskite structure are among the most useful materials because they can convert electrical energy into mechanical energy and vice versa. Although piezoelectricity strongly depends on ferroelastic domain density, there are no general methods to controllably fabricate dense domain structures in ferroelectric films. Here, we report a mechanism to achieve a large piezoresponse based on an electrically induced dense ferroelastic domain structure in ferroelectric films. We demonstrate a large piezoelectric coefficient of 310 pm/V under both bipolar and unipolar electric fields, which is about 3 times larger than that in epitaxial single-crystalline thin films of tetragonal PbZr_0.4Ti_0.6O₃ grown on silicon substrates. Analysis by a combination of in situ Raman and piezoresponse force microscopy suggests that the large piezoelectric response can be explained by the motion of dense ferroelastic domain walls. This mechanism provides a general method to enhance the piezoelectric properties of ferroelectric materials.

中文翻译：

电感应致密铁弹性体域驱动的大机电响应：超越形变相边界

基于具有钙钛矿结构的铁电体的压电材料是最有用的材料，因为它们可以将电能转化为机械能，反之亦然。尽管压电强烈地依赖于铁弹性畴密度，但是没有可控制地制造铁电薄膜中致密畴结构的通用方法。在这里，我们报告了一种基于铁电薄膜中的电致密铁磁畴结构实现大压电响应的机制。我们在双极和单极电场下均显示出310 pm / V的大压电系数，约为四方PbZr _0.4 Ti _0.6 O _3的外延单晶薄膜的3倍大。生长在硅衬底上。通过原位拉曼和压电响应力显微镜相结合的分析表明，大的压电响应可以用致密的铁弹性畴壁的运动来解释。该机制提供了增强铁电材料的压电特性的通用方法。

更新日期：2020-07-28

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