Epitaxial Formation of SiC on (100) Diamond,ACS Applied Electronic Materials

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Epitaxial Formation of SiC on (100) Diamond
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2020-06-12 , DOI: 10.1021/acsaelm.0c00289
Alexander Tsai ₁ , Alireza Aghajamali ₂ , Nikolai Dontschuk _{1,

3} , Brett C. Johnson ₃ , Muhammad Usman _{3,

4} , Alex K. Schenk ₅ , Michael Sear ₅ , Christopher I. Pakes ₅ , Lloyd C. L. Hollenberg ₃ , Jeffrey C. McCallum ₁ , Sergey Rubanov ₆ , Anton Tadich ₇ , Nigel A. Marks ₂ , Alastair Stacey _{3,

8}

Affiliation

We demonstrate locally the coherent formation of silicon carbide (SiC) on diamond, a rare example of heteroepitaxy with a lattice mismatch that exceeds 20%. High-resolution transmission electron microscopy confirms the quality and atomic structure near the interface. Guided by molecular dynamics simulations, a theoretical model is proposed for the interface wherein the large lattice strain is alleviated via point dislocations in a two-dimensional plane without forming extended defects in three dimensions. The possibility of realizing heterojunctions of technologically important materials such as SiC with diamond offers promising pathways for thermal management of high-power electronics. At a fundamental level, the study redefines our understanding of SiC and diamond heteroepitaxy and furthers our understanding of large lattice mismatched interfaces.

中文翻译：

在（100）金刚石上外延形成SiC

我们在本地证明了碳化硅（SiC）在金刚石上的相干形成，这是晶格失配超过20％的异质外延的罕见例子。高分辨率透射电子显微镜证实了界面附近的质量和原子结构。在分子动力学模拟的指导下，为该界面提出了一种理论模型，其中通过在二维平面内的点位错减轻了大的晶格应变，而没有在三维上形成扩展的缺陷。实现具有金刚石的SiC等重要技术材料的异质结的可能性为大功率电子器件的热管理提供了有希望的途径。从根本上讲，

更新日期：2020-07-28

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