Orthogonal Electric Control of the Out‐Of‐Plane Field‐Effect in 2D Ferroelectric α‐In2Se3,Advanced Electronic Materials

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Orthogonal Electric Control of the Out‐Of‐Plane Field‐Effect in 2D Ferroelectric α‐In2Se3
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2020-06-11 , DOI: 10.1002/aelm.202000061
Yue Li _{1,

2} , Chen Chen _{1,

2} , Wei Li ₂ , Xiaoyu Mao _{1,

2} , Heng Liu _{1,

2} , Jianyong Xiang ₃ , Anmin Nie ₃ , Zhongyuan Liu ₃ , Wenguang Zhu _{1,

2} , Hualing Zeng _{1,

2}

Affiliation

Tuning the electric properties of crystalline solids is at the heart of material science and electronics. Generating the electric field‐effect via an external voltage is a clean, continuous, and systematic method. Here, utilizing the unique electric dipole locking in van der Waals (vdW) ferroelectric α‐In₂Se₃, a new approach is reported to establish the electric gating effect, where the electrostatic doping in the out‐of‐plane direction is induced and controlled by an in‐plane voltage. With the vertical vdW heterostructure of ultrathin α‐In₂Se₃ and MoS₂, an in‐plane voltage gated coplanar field‐effect transistor with distinguished and retentive on/off ratio is validated. The results demonstrate unprecedented electric control of ferroelectricity, which paves the way for integrating 2D ferroelectric into novel nanoelectronic devices with broad applications.

中文翻译：

二维铁电α-In2Se3中平面场效应的正交电控制

调整晶体固体的电性能是材料科学和电子学的核心。通过外部电压产生电场效应是一种干净，连续且系统的方法。在此，利用独特的电偶极于van锁定范德华（范德华）铁电体α-在₂硒₃，一种新的方法被报告给建立的电选通的效果，其中在外的平面中的方向上的静电掺杂诱导和由平面电压控制。具有超薄α‐In ₂ Se ₃和MoS ₂的垂直vdW异质结构，验证了具有出色的保持性开/关比的平面内电压门控共面场效应晶体管。结果表明，铁电具有前所未有的电控制功能，这为将2D铁电集成到具有广泛应用的新型纳米电子设备中铺平了道路。

更新日期：2020-07-13

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