The energetics of metal/organic semiconductor (OSC) and polymer electrolyte/OSC interfaces play a key role in the operation of a variety of electronic and optoelectronic devices. Despite extensive research in the field, the way such energetics impact on device properties is often poorly understood and overlooked. They can cause unusual phenomena as reported herein in the case of metal/OSC/electrolyte systems for which an increase of up to three orders of magnitude in the conductivity of thin OSC films is observed. Using coplanar electrode devices and OSC films made of regioregular poly(3‐hexylthiophene) (P3HT) materials, it is shown that such a phenomenon results from synergistic effects between the metal/P3HT interface energetics, charge transport, and electrolyte conductivity. The experiments make evident the existence of a thickness‐dependent electrostatic potential at the P3HT surface, which leads to ion‐assisted hole accumulation at the upper edge of the P3HT film. Together with the potential of the investigated two‐electrode devices for sensing applications, this study provides new insights for the development of electrolyte‐gated transistors and can serve as a generic method for the extraction of parameters like the space‐charge width of metal/OSC junctions.

中文翻译：

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离子激活大大增强了两端子设备中有机半导体薄膜的电导率

金属/有机半导体（OSC）和聚合物电解质/ OSC界面的能量学在各种电子和光电设备的操作中起着关键作用。尽管在该领域进行了广泛的研究，但这种能量学对设备性能的影响方式却很少被理解和忽视。在金属/ OSC /电解质系统的情况下，它们会引起异常现象，如本文报道的那样，在该系统中，观察到薄OSC薄膜的电导率增加了多达三个数量级。使用共面电极装置和由区域规则的聚（3-己基噻吩）（P3HT）材料制成的OSC膜，表明这种现象是由于金属/ P3HT界面能量，电荷传输和电解质电导率之间的协同效应导致的。实验证明，P3HT表面存在与厚度有关的静电势，这会导致离子辅助空穴在P3HT膜的上边缘积累。结合已研究的用于传感应用的双电极设备的潜力，本研究为电解质门控晶体管的发展提供了新见识，并可作为提取诸如金属/ OSC的空间电荷宽度之类的参数的通用方法路口。