In this study, the phenol red (PR) dye film has been deposited on n-type silicon wafer and SEM, XRD measurements of the film have taken. Then, the PR/n-Si photodiode has been fabricated and (dark) electrical and photoresponse characterization has been analysed. The current-Voltage (I-V) measurements have been carried out at varied light power ranging from 100 mW/cm² to 400 mW/cm². Rectification ratios (RR) have been determined as a function of illumination intensities and they are determined as 115.47 for 100 mW/cm² and 30.26 for 400 100 mW/cm², respectively. The ideality factor and the barrier height of the Co/PR/n-Si photodiode have been determined as 2.80 and 0.52 eV, respectively in dark. Therefore, it has been seen that the PR/n-Si photodiode performances are strongly dependent on the incident optical power. Namely, the current density has increased remarkably with the power of light at the same reverse bias voltage and this behavior is explained by strong capability of converting a light signal into an electrical for the PR/n-Si photodiode device. Responsivity (R) and detectivity (D*) of the PR/n-Si photodiode are also plotted as a function of illumination intensities for reverse biases and it is found that both parameters are dependent on the illumination intensity. Finally, the capacitance–voltage (C-V) characteristics of the device have been carried out at various frequencies. Obtained experimental results indicate that the PR dye can be used in various optoelectronic applications.

在这项研究中，酚红（PR）染料薄膜已沉积在n型硅晶片上，并用SEM，XRD对该薄膜进行了测量。然后，已制造出PR / n-Si光电二极管，并分析了（暗）电和光响应特性。电流-电压（IV）测量是在100 mW / cm ²至400 mW / cm ^2的变化光功率下进行的。整流比（RR）已确定为照明强度的函数，分别确定为100 mW / cm ^2的115.47和400 100 mW / cm ^2的30.26 。Co / PR / n-Si的理想因子和势垒高度光电二极管在黑暗中分别确定为2.80和0.52 eV。因此，已经看到，PR / n-Si光电二极管的性能很大程度上取决于入射光功率。即，在相同的反向偏置电压下，电流密度随着光的功率而显着增加，并且通过将光信号转换为PR / n- Si光电二极管器件的电的强大能力来解释这种行为。PR / n - Si的响应度（R）和检测度（D *）还绘制了光电二极管作为反向偏置的照明强度的函数，并且发现两个参数都取决于照明强度。最后，器件的电容-电压（CV）特性已在各种频率下实现。获得的实验结果表明PR染料可用于各种光电应用中。