Mn-doped BiFeO₃ films were prepared by chemical solution deposition method on fluorine doped tin oxide conductive glass via spin-coating technique. XRD pattern reveals the presence of the impurity phase of Bi₂Fe₄O₉ in BiFeO₃ films, while no impurity phase is found in the Mn-doped thin films. XPS spectrum demonstrates the purity of prepared thin films by exhibiting the desired elements alone and it also shows that Mn-doping restrains the change of Fe³⁺ valency. The leakage current result shows that Mn-doping causes the change of conduction mechanism led by the change of microstructure and the restraint of Fe ions valence. BiFe_0.95Mn_0.05O₃ thin film has a good ferroelectric performance with high remnant polarization (P_r) value of 27 μC/cm². Mn doped BiFeO₃ films have stronger saturation magnetization than the BiFeO₃ thin films. UV vis NIR transmittance spectra depicts the optical property, which shows the optical band gap decreases with the concentration of Mn increases.

采用旋涂技术，通过化学溶液沉积法在掺氟氧化锡导电玻璃上制备了掺锰的BiFeO ₃薄膜。XRD图谱表明BiFeO ₃薄膜中存在Bi ₂ Fe ₄ O ₉杂质相，而Mn掺杂薄膜中未发现杂质相。XPS光谱通过仅显示所需元素来证明所制备薄膜的纯度，并且还表明Mn掺杂会抑制Fe ³⁺价态的变化。泄漏电流的结果表明，Mn的掺杂引起了微观结构的变化和Fe离子价态的约束导致的导电机理的变化。BiFe _0.95 Mn _0.05O ₃薄膜具有良好的铁电性能，且剩余极化（P _r）值为27μC/ cm ²。的Mn掺杂的BiFeO ₃膜具有更强的饱和磁化强度比的BiFeO ₃薄膜。UV vis NIR透射光谱描述了光学性质，其显示光学带隙随Mn浓度的增加而减小。