当前位置: X-MOL 学术Microelectron. Reliab. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
“Limiting power cycling stress in power MOSFETs by active thermal control”
Microelectronics Reliability ( IF 1.6 ) Pub Date : 2020-08-01 , DOI: 10.1016/j.microrel.2020.113720
Paolo Magnone , Hossein Abedini , Andrea Petucco

Abstract In this work we propose a system which is able to actively control the temperature of a power MOSFET, in order to limit the temperature swing and hence to reduce the power/thermal cycling effect. To this purpose a dedicated driving circuit, allowing to control the gate voltage of the switching device under investigation, is used in a synchronous buck converter. Therefore, power losses can be modulated in order to reach the desired temperature through self-heating effects. The implemented control system is able to compensate the non-linear relationship between the gate voltage and the on-resistance. Moreover, to improve the response of the system, a predictor has been implemented, having the capability of on-line tuning the thermal resistance of the device. Experimental results are reported to demonstrate the suitability of this solution to control the temperature in the semiconductor device. The reduction of temperature swing under power and thermal cycling is also demonstrated.

中文翻译:

“通过主动热控制限制功率 MOSFET 中的功率循环应力”

摘要 在这项工作中,我们提出了一种能够主动控制功率 MOSFET 温度的系统,以限制温度摆动,从而减少功率/热循环效应。为此,在同步降压转换器中使用了专用驱动电路,允许控制所研究的开关器件的栅极电压。因此,可以调节功率损耗,以通过自热效应达到所需温度。所实施的控制系统能够补偿栅极电压和导通电阻之间的非线性关系。此外,为了改善系统的响应,已实施预测器,具有在线调整设备热阻的能力。据报道,实验结果证明该解决方案适用于控制半导体器件中的温度。还证明了功率和热循环下温度波动的减少。
更新日期:2020-08-01
down
wechat
bug