Abstract Incorporation of SnS as a blocking layer at the interface of TiO2 and CH3NH3PbI3(MAPbI3) perovskite has been investigated. With respect to the control, the inclusion of a 3 nm SnS layer via thermal evaporation leads to an improved power conversion efficiency as well as stability, under similar storage conditions. The highest power conversion efficiency of approx. 13.6% is achieved for the champion cell (average 12%) and stability study over the period of 4 weeks revealed the retention of approximately 85% of its initial efficiency (average 83%). The surface photovoltage spectroscopy (SPV) measurements confirmed that the improvement in the photovoltaic performance is due to the lower photogenerated electron lifetime exhibited by devices with the SnS blocking layer which in turn is attributed to the reduction of trap states at the TiO2-perovskite interface, decreasing the interfacial charge recombination. Electrical impedance spectroscopy (EIS) and photoluminescence (PL) spectroscopy, additionally endorse the reduction of traps and recombination centers.

中文翻译：

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SnS无机表面阻挡层对钙钛矿太阳能电池性能和稳定性的影响

摘要 研究了在 TiO2 和 CH3NH3PbI3(MAPbI3) 钙钛矿界面处掺入 SnS 作为阻挡层。在控制方面，在类似的存储条件下，通过热蒸发包含 3 nm SnS 层可提高功率转换效率和稳定性。最高功率转换效率约。冠军细胞实现了 13.6%（平均 12%），并且在 4 周内的稳定性研究表明保留了其初始效率的大约 85%（平均 83%）。表面光电压谱 (SPV) 测量证实，光伏性能的提高是由于具有 SnS 阻挡层的器件所表现出的光生电子寿命较低，而这又归因于 TiO2-钙钛矿界面处陷阱态的减少，减少界面电荷复合。电阻抗光谱 (EIS) 和光致发光 (PL) 光谱还支持减少陷阱和复合中心。