The application of 2D materials in FETs inevitably involves contact with metals, which can dramatically affect the performances of electronic devices. Hence, controlling contact performances to form low-resistance Ohmic contact between the metal electrode and semiconductor materials is crucial. Therefore, the vdW stackings of G/InS, G/SIn₂Se and G/SeIn₂Se heterostructures are designed and investigated by density functional theory, the results indicate that the Schottky barrier height (SBH) of three heterostructures are 0.17 ​eV, 0.31 ​eV and 0.53 ​eV, respectively. Moreover, the SBH can be significantly modulated by external biaxial strain. Meanwhile, the tunneling barriers can be reduced through controlled the interface distance. Considering the Schottky barrier and the tunneling barrier, the G/InS heterostructures has the best performance and controllability. These theoretical studies not only provide fundamental properties of G/InS, G/SIn₂Se and G/SeIn₂S vdW heterostructures, but also provide new strategy for designing high-performance FETs based on G/InS and G/In₂SSe heterostructures.

二维材料在FET中的应用不可避免地涉及与金属的接触，这会极大地影响电子设备的性能。因此，控制接触性能以在金属电极和半导体材料之间形成低电阻欧姆接触至关重要。因此，G / InS，G / SIn ₂ Se和G / SeIn ₂的vdW堆叠通过密度泛函理论设计和研究了Se异质结构，结果表明三种异质结构的肖特基势垒高度（SBH）分别为0.17 eV，0.31 eV和0.53 eV。而且，SBH可以被外部双轴应变显着调节。同时，通过控制界面距离可以减少隧道势垒。考虑到肖特基势垒和隧道势垒，G / InS异质结构具有最佳性能和可控性。这些理论研究不仅提供了G / InS，G / SIn ₂ Se和G / SeIn ₂ S vdW异质结构的基本特性，而且为基于G / InS和G / In ₂ SSe异质结构设计高性能FET提供了新的策略。。