The Numerical Advanced Model of Electron Cyclotron Resonance Ion Source (NAM-ECRIS) is applied for studies of the physical processes in the source. Solutions of separately operating electron and ion modules of NAM-ECRIS are matched in iterative way such as to obtain the spatial distributions of the plasma density and of the plasma potential. Results reveal the complicated profiles with the maximized plasma density close to the ECR surface and on the source axis. The ion-trapping potential dips are calculated to be on the level of ~(0.01-0.05) V being located at the plasma density maxima. The highly charged ions are also localized close to the ECR surface. The biased electrode effect is due to an electron string along the source axis formed by reflection of electrons from the biased electrode and the extraction aperture. The string makes profiles of the highly charged ions more peaked on the source axis, thus increasing the extracted ion currents.

中文翻译：

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电子回旋共振离子源中等离子体电位和密度的空间分布

电子回旋共振离子源的高级数值模型 (NAM-ECRIS) 用于研究源中的物理过程。NAM-ECRIS 独立运行的电子和离子模块的解决方案以迭代方式匹配，以获得等离子体密度和等离子体电位的空间分布。结果揭示了在靠近 ECR 表面和源轴上具有最大化等离子体密度的复杂轮廓。计算出的离子俘获电位下降在 ~(0.01-0.05) V 的水平上，位于等离子体密度最大值处。高电荷离子也位于 ECR 表面附近。偏压电极效应是由于来自偏压电极和提取孔的电子反射形成的沿源轴的电子串。