Copper doping in II–VI semiconductor nanocrystals (NCs) has sparked enormous debate regarding the oxidation state of Cu ions and their hugely differing consequences in optoelectronic applications. The identity of a magnetically active Cu²⁺ ion or a magnetically inactive d¹⁰ Cu⁺ ion has generally been probed using optical techniques, and confusion arises from the spatial clutter that is part of the technique. One major probe that could declutter the data obtained from ensemble emission is single-particle fluorescence spectroscopy. In this work, using this very technique along with X-ray absorption spectroscopy probing the local environment of dopant ions, we study Cu-doped II–VI semiconductor NCs to find conclusive evidence on the oxidation state of Cu dopants and hence the mechanism of their emission. Detailed analysis of blinking properties has been used to study the single-particle nature of the NCs.

中文翻译：

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II-VI半导体纳米晶体中的铜掺杂：单颗粒荧光研究。

II-VI半导体纳米晶体（NC）中的铜掺杂引发了有关Cu离子的氧化态及其在光电应用中的巨大差异的巨大争论。具有磁性的Cu ²⁺离子或具有磁性的d ¹⁰ Cu ⁺的身份通常已经使用光学技术探测了离子，并且混乱是由于作为技术一部分的空间混乱而引起的。单粒子荧光光谱法是可能使从整体发射中获得的数据混乱的一种主要探针。在这项工作中，我们将这项技术与X射线吸收光谱一起用于探测掺杂离子的局部环境，我们研究了掺杂Cu的II-VI半导体NC，以找到有关Cu掺杂物氧化态及其机理的最终证据。排放。眨眼特性的详细分析已用于研究NC的单粒子性质。