In this article, the influence of variable thermal conductivity and Hall current is investigated for elastic semiconductor medium. The medium is linear and exposed to a very strong magnetic field when the thermal conductivity is taken as a linear function on temperature. The interaction between the external magnetic field and microelements (microstructure) of the elastic medium is studied. The microtemperature effect is generated in the context of the photothermal excitation processes. The overlapping between elastic-magnetic-plasma-thermal waves is discussed in one dimension (1D) for a semiconductor rod. The Laplace transform and specific map in 1D are used to solve the governing equations in microtemperature field. The exact solutions of the main physical quantities in this phenomenon are obtained analytically in the physical time domain. Some mechanical boundary conditions with thermal shock are applied at the free surface of the elastic medium in the context of recombination plasma process. The inversion of Laplace transform is used numerically to obtain the complete solutions of main physical quantities. Some comparisons are made under the influence of variable thermal conductivity in Hall current with microtemperature effect for the physical quantities that they displayed graphically and discussed theoretically.

在本文中，研究了可变热导率和霍尔电流对弹性半导体介质的影响。当热导率作为温度的线性函数时，介质是线性的并且暴露在非常强的磁场中。研究了外磁场与弹性介质的微元（微结构）之间的相互作用。微温效应是在光热激发过程的背景下产生的。对于半导体棒，在一维（1D）中讨论了弹性-磁-等离子体-热波之间的重叠。采用拉普拉斯变换和一维特定映射求解微温场控制方程。该现象中主要物理量的精确解是在物理时域解析得到的。在复合等离子体工艺的背景下，在弹性介质的自由表面上应用了一些具有热冲击的机械边界条件。数值上利用拉普拉斯变换的反演得到主要物理量的全解。在霍尔电流中的可变热导率与微温效应的影响下，对它们以图形显示和理论上讨论的物理量进行了一些比较。