Abstract Growth of efficient III-N based light emitting devices by plasma assisted molecular beam epitaxy has been elusive, even though the technique has attractive advantages in comparison to metal organic chemical vapor deposition. Modern high-flux radio frequency plasma systems could remedy this issue by enabling growth of InxGa1-xN at higher temperatures than previously possible, likely improving the material quality. In this work, active nitrogen fluxes of up to 3.5 μm/h GaN-equivalent growth rate were employed to grow InxGa1-xN alloys. InxGa1-xN growth rates of 1.3 μm/h were demonstrated at growth temperatures of 550 °C and 600 °C with maximum film compositions of In0.25Ga0.75N and In0.21Ga0.79N, respectively. A composition of In0.05Ga0.95N was observed in a film grown at 700 °C with smooth step-terrace morphology.

中文翻译：

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InxGa1-xN 薄膜的高氮通量等离子体辅助分子 Bean 外延生长

摘要 通过等离子体辅助分子束外延生长高效的 III-N 基发光器件一直难以捉摸，尽管与金属有机化学气相沉积相比，该技术具有吸引人的优势。现代高通量射频等离子体系统可以通过在比以前更高的温度下生长 InxGa1-xN 来解决这个问题，可能会提高材料质量。在这项工作中，采用高达 3.5 μm/h GaN 等效生长速率的活性氮通量来生长 InxGa1-xN 合金。InxGa1-xN 生长速率为 1.3 μm/h，生长温度分别为 550 °C 和 600 °C，最大薄膜成分分别为 In0.25Ga0.75N 和 In0.21Ga0.79N。在 700 °C 生长的薄膜中观察到 In0.05Ga0.95N 的组成，具有平滑的阶梯形形态。