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TEM-based dislocation tomography: Challenges and opportunities
Current Opinion in Solid State & Materials Science ( IF 12.2 ) Pub Date : 2020-06-11 , DOI: 10.1016/j.cossms.2020.100833
Zongqiang Feng , Rui Fu , Chengwei Lin , Guilin Wu , Tianlin Huang , Ling Zhang , Xiaoxu Huang

Dislocation tomography based on transmission electron microscopy (TEM) exhibits excellent capabilities in three dimensional (3D) visualization of various dislocation structures but still suffers from poor quantification and coupling between the geometry and crystallography of dislocations. In the present paper, we review the research on 3D quantitative characterization of dislocation structures using TEM-based dislocation tomography and stereo pair methods, and briefly introduce a novel TEM-based tomographic crystallography method which can simultaneously and quantitatively characterize the geometric and crystallographic features of dislocations. We summarize some technical problems and challenges in the workflow of TEM-based dislocation tomography, including image contrast optimization, irradiation damage, image processing, reconstruction algorithms as well as dislocation segmentation and identification. We further discuss the potential applications of TEM-based dislocation tomography and envisage several promising approaches for developing an advanced four-dimensional (4D) dislocation characterization technique.



中文翻译:

基于TEM的脱位层析成像:挑战与机遇

基于透射电子显微镜(TEM)的位错断层扫描在各种位错结构的三维(3D)可视化中显示出卓越的功能,但仍受差于位错的几何定量和结晶学的定量和耦合的影响。在本文中,我们回顾了基于TEM的位错层析成像和立体对方法对位错结构进行3D定量表征的研究,并简要介绍了一种新型的基于TEM的层析成像晶体学方法,该方法可以同时和定量地表征金属的几何和晶体学特征。脱臼。我们总结了基于TEM的位错层析成像工作流程中的一些技术问题和挑战,包括图像对比度优化,辐照损伤,图像处理,重建算法以及位错分割和识别。我们将进一步讨论基于TEM的位错层析成像的潜在应用,并设想几种有前途的方法来开发先进的四维(4D)位错表征技术。

更新日期:2020-08-15
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