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Improvement in Sensing Characteristics of Silicon Microstructure based MEMS Capacitive Sensor for Automotive Applications
Silicon ( IF 2.8 ) Pub Date : 2020-06-10 , DOI: 10.1007/s12633-020-00540-z
Shreya Suman , Deepak Punetha , Saurabh Kumar Pandey

Capacitive pressure sensors have become a reasonable choice due to their low power consumption, energy efficiency, and robustness. In this paper, a thorough investigation of MEMS based capacitive pressure sensor with square diaphragm has been carried out. A comparative study of the diaphragm displacement and capacitance as a function of external pressure and temperature has been done by using various diaphragm materials such as Si, Poly Si, Si3N4 and 3C-SiC. The performance analysis of the device was envisaged with and without packaging stress by measuring various parameters. The simulation results are emphasized on the change in capacitance at different die bonding temperatures. Temperature dependence of capacitance at varying ambient pressure has also been realized. The present work will facilitate researchers for choosing a selective material for automotive applications.



中文翻译:

汽车应用基于硅微结构的MEMS电容式传感器的传感特性的改进

电容式压力传感器由于其低功耗,能效和坚固性而已成为合理的选择。本文对基于MEMS的方形膜片式电容式压力传感器进行了深入研究。通过使用各种隔膜材料(例如Si,Poly Si,Si 3 N 4),对隔膜位移和电容随外部压力和温度的变化进行了比较研究。和3C-SiC。设想通过测量各种参数在有或没有包装应力的情况下对设备进行性能分析。仿真结果强调了在不同芯片键合温度下电容的变化。还已经实现了在变化的环境压力下电容的温度依赖性。目前的工作将有助于研究人员选择用于汽车应用的选择性材料。

更新日期:2020-06-10
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