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Effect of binary mixture of Nd–Zn ions on the electrical, structural and dielectric behavior of calcium-barium M-type hexaferrite nanoparticles
Indian Journal of Physics ( IF 1.6 ) Pub Date : 2020-06-10 , DOI: 10.1007/s12648-020-01760-0
Hasan M. Khan , Imran Sadiq , Khuram Ali , Misbah Mirza , Saeed Ahmed Buzdar , Zahida Batool , Muhammad Zahid , Muhammad Nadeem , Aziz ur Rehman , M. U. Islam

This study reports the synthesis and characterization of Nd–Zn-doped nanocrystalline Ca0.5Ba0.5-xNdxZnyFe12-yO19 (x = 0.00–0.10; y = 0.00–1.00) hexaferrites prepared by sol–gel auto combustion method. Doping of the binary mixture of Nd–Zn enhances the electrical and structural properties of Ca0.5Ba0.5-xNdxZnyFe12-yO19 hexaferrite nanoparticles. The required annealing temperature was obtained on the basis of TG/DTA analysis. The results of X-ray diffraction patterns revealed that dopant contents are inversely related to lattice parameters. The average nanocrystalline size lies in the range from 16 to 29 nm. The DC electrical resistivity decreased, whereas the drift mobility was increased by increasing doping of Nd–Zn. Maxwell–Wagner and Koop’s models were used to explain the dielectric constant and dielectric loss versus frequency. Nd–Zn doping favored the decrease in dielectric losses to a large extent, so the barium hexaferrite along with these dopants is very useful for high frequency applications. AC conductivity at low frequencies explained the grain boundary behavior; however, the dispersion at high frequency may be attributed to the conductivity of grains. The M–H loop indicated that the coercivity changed as a result of increase in grain size and saturation magnetization was increased as a result of strong and magnetic cations distribution on interstitial sites.



中文翻译:

Nd-Zn离子的二元混合物对钙钡M型六铁氧体纳米粒子的电,结构和介电行为的影响

这项研究报告了 溶胶-凝胶自动制备的Nd-Zn掺杂纳米晶Ca 0.5 Ba 0.5- x Nd x Zn y Fe 12- y O 19x  = 0.00-0.10; y = 0.00-1.00)的合成和表征燃烧方法。掺杂Nd-Zn的二元混合物可增强Ca 0.5 Ba 0.5- x Nd x Zn y Fe 12- y O 19的电和结构性能六价铁氧体纳米粒子。根据TG / DTA分析获得所需的退火温度。X射线衍射图谱的结果表明,掺杂剂含量与晶格参数成反比。平均纳米晶体尺寸在16至29nm的范围内。直流电阻率降低,而漂移迁移率通过增加Nd-Zn的掺杂而增加。用麦克斯韦-瓦格纳和库普模型来解释介电常数和介电损耗与频率的关系。Nd-Zn掺杂在很大程度上有利于降低介电损耗,因此六铁酸钡与这些掺杂剂一起对于高频应用非常有用。低频交流电导率解释了晶界行为;然而,高频的色散可以归因于晶粒的电导率。M–H回路表明,矫顽力由于晶粒尺寸的增加而变化,饱和磁化强度由于间隙位置上的强阳离子和磁阳离子分布而增加。

更新日期:2020-06-10
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