Abstract

By measuring low-temperature photoluminescence, we demonstrated the role of interface blurring and the introduction of background impurities in the formation of the single-electron spectrum of GaAs/Al_xGa_1–xAs quantum well heterostructures used to fabricate mid-IR photodetectors. Background impurities, having a noticeable effect on the emission spectrum of quantum wells, do not affect their absorption spectra (luminescence excitation). Nevertheless, the blurring of the interface distorts the structure of single-electron states significantly, while weakly manifesting itself in luminescence. We proposed a method for estimating the degree of blurring of quantum well interfaces for photodetectors by the spectra of excitation of their exciton luminescence.

中文翻译：

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中红外光电探测器GaAs / AlGaAs异质结构单电子光谱的低温发光研究

摘要

通过测量低温光致发光，我们证明了界面模糊的作用以及背景杂质在用于制造中红外光电探测器的GaAs / Al _x Ga _{1– x} As量子阱异质结构单电子光谱形成中的作用。对量子阱的发射光谱有显着影响的背景杂质不影响其吸收光谱（发光激发）。然而，界面的模糊显着扭曲了单电子态的结构，而在发光中却微弱地表现出来。我们提出了一种通过其激子发光激发光谱估算光电探测器量子阱界面模糊程度的方法。