In this work, the authors developed SiC(10 nm)/Ag/SiC(10 nm) thin films showing an electroforming-free resistive switching (RS) effect with a switching ratio of 102. The observed RS effect is attributed to charging and discharging of Ag nanoparticles in the film layer. Further, SiC/Ag/SiC film shows an excellent endurance and retention as well as a good thermal stability of RS characteristics. It is also identified that the switching ratio is invariant but the switching voltage of the device greatly depends on the Ag nanoparticles concentration and the operation temperature of the device. Therefore, SiC/Ag/SiC thin films are attractive for next-generation memory devices with enhanced durability.

在这项工作中，作者开发了SiC（10 nm）/ Ag / SiC（10 nm）薄膜，该薄膜显示出无电铸电阻切换（RS）效应，且切换比率为10 2。观察到的RS效应归因于膜层中Ag纳米颗粒的充电和放电。另外，SiC / Ag / SiC膜显示出优异的耐久性和保持性以及RS特性的良好的热稳定性。还可以确定，开关比是不变的，但是器件的开关电压在很大程度上取决于Ag纳米颗粒的浓度和器件的工作温度。因此，SiC / Ag / SiC薄膜对于具有增强的耐久性的下一代存储装置具有吸引力。