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Direct Evidence of Spin Transfer Torque on Two-Dimensional Cobalt-Doped MoS2 Ferromagnetic Material
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2020-06-10 , DOI: 10.1021/acsaelm.0c00384
Meng Huang 1 , Junxiang Xiang 1 , Chao Feng 1 , Haoliang Huang 2 , Ping Liu 1 , Yanfei Wu 3 , Alpha T. N’Diaye 4 , Gong Chen 5 , Jinghua Liang 6 , Hongxin Yang 6 , Jing Liang 7 , Xudong Cui 8 , Jinxing Zhang 9 , Yalin Lu 1, 2 , Kaihui Liu 7 , Dazhi Hou 1 , Luqiao Liu 3 , Bin Xiang 1
Affiliation  

The manipulation of two-dimensional (2D) ferromagnetic materials by spin current is emerging as the central theme of 2D spintronics research. A paradigm of spintronic devices, the spin Hall magnetoresistance (SMR) device, has been elucidated to obtain direct evidence of spin transfer torque (STT) on a three-dimensional (3D) ferromagnet. Here, we present pioneering results on the SMR effect in a 2D cobalt-doped MoS2/Ta van der Waals heterostructure, confirming the existence of STT by the magnetic-field angle dependence of the resistance. Our study on the STT of 2D ferromagnetic materials indicates the feasibility of the realization of 2D spintronic devices.

中文翻译:

二维钴掺杂MoS 2铁磁材料上自旋传递扭矩的直接证据

自旋电流对二维(2D)铁磁材料的操纵正在成为2D自旋电子学研究的中心主题。已经阐明了自旋电子器件的一个范例,即自旋霍尔磁阻(SMR)器件,以获得在三维(3D)铁磁体上自旋传递转矩(STT)的直接证据。在这里,我们提出了关于二维钴掺杂MoS 2 / Ta van der Waals异质结构中SMR效应的开创性结果,通过电阻的磁场角依赖性证实了STT的存在。我们对2D铁磁材料的STT的研究表明了实现2D自旋电子器件的可行性。
更新日期:2020-06-23
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