Graphitic carbon nitride (g-C₃N₄) is an analog of graphite due to its unique electronic structure. g-C₃N₄ based materials have been used in photocatalytic applications. However, pure g-C₃N₄ suffers from major shortcomings which include poor disparity, low surface area and a high recombination rate of photo generated electron-hole pairs that significantly reduce its photocatalytic activity. In this work, self-assembly of g-C₃N₄ sheet into rod shaped g-C₃N₄ was developed via a simple polymerisation method. A composite made of g-C₃N₄ nanorods and rGO (rGO-RCN) was also prepared. The band gap g-C₃N₄ was shifted from 2.77 to 2.6 eV evidented by UV-DRS data. As a result, rGO-RCN showed a relatively high absorption in the visible region. Moreover, a fast electron transfer rate was observed with rGO-RCN composite as conformed from PL analysis and photocurrent measurement. The formation of nanorod and sheet morphologies was confirmed via TEM analysis. The photocatalytic activities of prepared sheet-g-C₃N₄ (SCN)_, Rod g-C₃N₄ (RCN), reduced graphene oxide supported sheet-g-C₃N₄ (rGO-SCN) and reduced graphene oxide supported Rod-g-C₃N₄ (rGO-RCN) were evaluated using a commonly used antibiotic (tetracycline). Among these catalysts, rGO-RCN nanocomposite showed sonophotocatalytic activity 3 times higher compared to pure g-C₃N₄. This superior sonophotocatalytic activity could be due to enhanced visible light absorption of the material, active sites generated by ultrasound, and the high electron transport property of rGO.

石墨碳氮化物（gC ₃ N ₄）由于其独特的电子结构而与石墨类似。基于gC ₃ N ₄的材料已用于光催化应用。然而，纯gC ₃ N _4的主要缺点包括视差差，表面积低以及光生电子-空穴对的高复合率，这大大降低了其光催化活性。在这项工作中，通过简单的聚合方法开发了将gC ₃ N ₄片材自组装成棒状gC ₃ N _4的方法。由gC ₃ N ₄制成的复合材料还制备了纳米棒和rGO（rGO-RCN）。由UV-DRS数据证实，带隙gC ₃ N ₄从2.77变化到2.6eV。结果，rGO-RCN在可见光区域显示出较高的吸收。此外，rGO-RCN复合材料的快速电子传输速率与PL分析和光电流测量一致。通过TEM分析证实了纳米棒和薄片形态的形成。制备的片状gC ₃ N ₄（SCN）_，棒状gC ₃ N ₄（RCN），还原性氧化石墨烯负载的片状gC ₃ N ₄（rGO-SCN）和还原性氧化石墨烯负载的Rod-gC的光催化活性使用常用的抗生素（四环素）评估₃ N ₄（rGO-RCN）。在这些催化剂中，rGO-RCN纳米复合材料的声光催化活性是纯gC ₃ N _4的3倍。这种优越的声光催化活性可能是由于增强了材料的可见光吸收，超声产生的活性位点以及rGO的高电子传输性能。