Al-doped ZnO ceramics were sintered by conventional sintering method and spark plasma sintering (SPS) respectively. Electrical properties and microstructure have been investigated by various measurements. The samples sintered via SPS exhibit a huge electrical conductivity, up to 3.0 × 10⁵ S/m at room temperature, which was much higher than that of the sample sintered via the conventional sintering. Structural and morphorlogical characterizations pointed out that the further incorporation of Al ions and the absence of a secondary phase, contribute to the increase of the carrier concentration. Raman spectroscopy revealed the occurrence of structural distortions and a disorder induced by Al doping. Photoluminescence spectra were interpreted by different electronic active defects such as the defect complexes (Al_Zn-Zn_i) which play a key for the high electrical conductivity. Thus, SPS and Al doping modified the microstructure and the concentration of the electronic active defects to ensure high electrical conductivities in doped ZnO-based ceramics.

分别采用常规烧结法和SPS法对Al掺杂ZnO陶瓷进行烧结。已经通过各种测量研究了电性能和微观结构。通过SPS烧结的样品在室温下具有高达3.0×10 ⁵ S / m的巨大电导率，远高于通过常规烧结法烧结的样品。结构和形态学特征指出，铝离子的进一步掺入和第二相的缺失有助于载流子浓度的增加。拉曼光谱揭示了Al掺杂引起的结构变形和无序的发生。光致发光光谱由不同的电子活性缺陷（如缺陷配合物（Al_Zn -Zn _i），这对于高电导率起着关键作用。因此，SPS和Al掺杂修饰了电子活性缺陷的微观结构和浓度，以确保掺杂的ZnO基陶瓷中的高电导率。