Abstract The alignment of band edges in bismide-based Ga 0.47 In 0.53 As 1−x Bi x –( Ga 0.47 In 0.53 As )–InP heterostructures is examined experimentally by THz emission spectroscopy technique. The determined band offsets of Ga 0.47 In 0.53 As 1 - x Bi x –InP heterojunctions at the x = 0 - 0.06 bismuth concentrations correspond to the ≈ 0.38 value of Q-parameter, which is defined as the relative conduction band offset with respect to energy gap difference in unstrained heterostructure. The relative conduction band offset is smaller for strained GaInAsBi layers, – it reduces to about 34 % at the bismuth concentration of x = 0.06 . The band offsets of Ga 0.47 In 0.53 As 1 - x Bi x – Ga 0.47 In 0.53 As heterojunctions are estimated to correspond to the same value of Q-parameter, Q ≈ 0.38 , while the strains are expected to reduce the relative conduction band offset down to about 25 % at the x = 0.06 Bi concentration.

中文翻译：

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GaInAsBi-InP异质结的带偏移

摘要 使用太赫兹发射光谱技术对基于铋化物的 Ga 0.47 In 0.53 As 1-x Bi x –( Ga 0.47 In 0.53 As )-InP 异质结构的能带边缘对齐进行了实验研究。Ga 0.47 In 0.53 As 1 - x Bi x –InP 异质结在 x = 0 - 0.06 铋浓度处的确定带偏移对应于 Q 参数的 ≈ 0.38 值，其定义为相对导带偏移无应变异质结构中的能隙差异。应变 GaInAsBi 层的相对导带偏移较小，– 在 x = 0.06 的铋浓度下，它减少到大约 34%。Ga 0.47 In 0.53 As 1 - x Bi x – Ga 0.47 In 0.53 As 异质结的能带偏移估计对应于相同的 Q 参数值，Q ≈ 0.38 ，