Abstract

The variation of low-energy slow secondary electron emission from the surface of relief structures (bumps) during their prolonged scanning in a low-voltage scanning electron microscope is estimated. The variation nature depends on the bump region profile, which is especially complex near relief structure angles. As a result, corresponding curve portions of the bump video signal, which results in an increase or even a decrease in geometrical sizes of these portions. The emission variation is explained by local charge induction in the natural oxide layer on the silicon surface. The portion size also changes due to contamination film bump deposition on the surface. Presumably, its deposition depends on charges induced on the bump surface and, hence, is poorly reproducible. The case of the absence of contamination broadening of a bump due to its prolonged scanning is fixed.

中文翻译：

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低压SEM扫描过程中的表面状态变化及其对凸版结构尺寸的影响

摘要

估计了在低压扫描电子显微镜中长时间扫描时，浮雕结构（凸块）表面的低能慢速二次电子发射的变化。变化的性质取决于凸块区域的轮廓，在凸版结构角度附近尤其复杂。结果，凸起视频信号的相应曲线部分导致这些部分的几何尺寸的增大甚至减小。发射变化通过硅表面自然氧化层中的局部电荷感应来解释。由于表面上的污染膜凸块沉积，部分尺寸也改变。据推测，其沉积取决于在凸块表面上感应的电荷，因此，其再现性较差。