Abstract

The multicomponent responses of photoreflectance spectrum is experimentally studied using selective phase analysis. After several experimental tests, the phase diagram of vanadium-doped GaAs|GaAs in region of fundamental energy shows only one component. On the other hand, the PR spectrum of GaAsBi|GaAs structure reveals at least two contributions relative to fundamental band–band transition and FKO for GaAs and/or GaAsBi layers. A successful separation of different components is realized by the help of adequate phase angle. We seem that the separation of contributions is useful to extract the values of the physical parameters for each region of the studied structure. We have detailed the methodology and the experimental procedure to identify each contribution.

中文翻译：

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GaAsBi / GaAs结构的多组分光反射光谱分析的系统方法

摘要

使用选择性相分析实验研究了光反射光谱的多组分响应。经过多次实验测试，在基本能区域中掺杂钒的GaAs | GaAs的相图仅显示一种成分。另一方面，GaAsBi | GaAs结构的PR谱显示至少有两个相对于基带-带跃迁和GaAs和/或GaAsBi层的FKO的贡献。借助于适当的相位角，可以成功分离不同的成分。我们似乎认为，贡献的分离对于提取所研究结构的每个区域的物理参数值很有用。我们详细介绍了确定每种贡献的方法和实验步骤。