The effect of 600 keV He + ion irradiation on the temperature and magnetic field dependence of the critical current density J C in high quality BaFe 1.84 Co 0.16 As 2 (Co-doped Ba122 type) thin films is investigated. The films are prepared by pulsed-laser-deposition (PLD) on CaF 2 (00 ##IMG## [http://ej.iop.org/images/0953-2048/33/7/075012/sustab8ffdieqn1.gif] {$l$} ) substrates. The irradiation dosages are varied between 1 × 10 13 and 1 × 10 16 cm −2 . Upon irradiation, the superconducting transition temperature T C drops slightly from 25 K for the unirradiated sample to about 20 K for the sample with the highest irradiation level. The J C values of the thin film samples are calculated by using the Bean critical state model. The results showed that J C could be enhanced substantially. The maximum J ...

中文翻译：

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氦离子辐照Ba（Fe，Co）2 As 2薄膜的临界电流密度的提高

研究了600 keV He +离子辐照对高质量BaFe 1.84 Co 0.16 As 2（Co掺杂Ba122型）薄膜中临界电流密度JC的温度和磁场依赖性的影响。通过在CaF 2（00 ## IMG ## [http://ej.iop.org/images/0953-2048/33/7/075012/sustab8ffdieqn1.gif]上的脉冲激光沉积（PLD）制备薄膜{$ l $}）基材。照射剂量在1×10 13和1×10 16 cm -2之间变化。辐照后，超导转变温度TC从未辐照样品的25 K稍微下降到辐照水平最高的样品的约20K。薄膜样品的JC值是使用Bean临界状态模型计算的。结果表明，JC可以大大提高。最大J ...