Recently, geometry-induced quantum effects in periodic low-dimensional structures were introduced and observed. Geometry-induced doping or G-doping has been shown to originate from nanograting. The resistivity, Hall coefficient, and magnetoresistance temperature dependences of the nanograting layers were recorded. G-doping junctions, termed p–p(v) junctions, have been fabricated in p-Si substrates and studied experimentally. Here, a p–p(v) junction-formation mechanism, based on previously obtained experimental data, is reported. The G-doping depth, carrier concentration, depletion layer thickness, and junction current are calculated and compared with experimental values. A voltage-dependent doping level, p(v), and corresponding physical mechanism is introduced, which explains the low values of the built-in potential barrier (approximately KT ), and low normalized reverse currents. High saturation currents are explained by the thermionic emission of majority carriers. The c...

中文翻译：

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G掺杂结形成机理

最近，在周期性的低维结构中引入并观察了几何诱导的量子效应。几何诱导的掺杂或G掺杂已显示出源自纳米光栅。记录了纳米光栅层的电阻率，霍尔系数和磁阻温度依赖性。G-掺杂结，称为p-p（v）结，已在p-Si衬底中制造并进行了实验研究。在这里，基于先前获得的实验数据，报道了ap–p（v）结形成机理。计算出G掺杂深度，载流子浓度，耗尽层厚度和结电流，并将其与实验值进行比较。引入了电压相关的掺杂水平p（v）以及相应的物理机制，解释了内置势垒的低值（大约KT），和低归一化反向电流。高饱和电流由多数载流子的热电子发射解释。那个...