Nowadays new silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are available in the market and they are expected to replace, in the next few years, the insulated gate bipolar transistor (IGBT) and Si-MOSFET in power electronic converters. SiC MOSFET transistors must be controlled by a dedicated circuit called ‘gate driver’ which ensures the switching orders transmission, the users’ safety and the switching cell integrity. The design of a gate driver dedicated to a SiC MOSFET module for applications up to 1200 V is described in this study. Galvanic isolation of control signals and power supplies, the power supply structure, SiC MOSFET switching orders and protection functions are detailed. Essential functions such as the short circuit detection and the implementation of the soft shut down are expanded. The developed gate driver is tested and validated. Experimental measurements allow for the validation of the good functioning of the developed gate driver in a highly disturbed environment.

中文翻译：

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用于1200 V以下应用的SiC MOSFET模块的栅极驱动器设计

如今，新型碳化硅（SiC）金属氧化物半导体场效应晶体管（MOSFET）进入市场，并且有望在未来几年内取代绝缘栅双极型晶体管（IGBT）和Si-MOSFET。电力电子转换器。SiC MOSFET晶体管必须由称为“栅极驱动器”的专用电路控制，以确保开关指令的传输，用户的安全和开关单元的完整性。这项研究描述了专用于SiC MOSFET模块的栅极驱动器的设计，适用于高达1200 V的应用。详细介绍了控制信号和电源的电隔离，电源结构，SiC MOSFET的开关顺序和保护功能。扩展了诸如短路检测和软关机实施之类的基本功能。开发的栅极驱动器经过测试和验证。实验测量允许在高度干扰的环境中验证已开发的栅极驱动器的良好功能。