We compare and report in this work heavy-ion irradiation induced single event transients (SETs) in sub-10nm node SOI multiple gate FETs with the help of calibrated 3-D TCAD simulations. Our analysis includes the nanosheet FET (NSFET), nanowire FET (NWFET), and FinFET along with two different device design modes based on the doping profiles, namely the inversion (INV) and junctionless mode (JL). We have also analyzed the impact of heavy-ion strike direction and angle of incidence on SET performance of various MuGFETs. Heavy-ion induced SET current has also been compared for multiple-sheet/wires of NSFET and NWFET. In addition to this, different locations of heavy-ion strike have also been considered in this work. Further, we have collated the simulation trends to propose empirical models that predict the impact of heavy-ion radiation on various MuGFETs. Our models include some of the device design parameters and heavy-ion exposure conditions as the input to the model. The proposed models are shown to correlate well with the TCAD simulation results for the set of model parameters that we have reported here. These models not only expedite the analysis, but these can also accurately predict SETs in advanced MuGFETs under heavy-ion irradiation.

中文翻译：

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由于重离子辐照，亚 10nm SOI MuGFET 中的单事件瞬态

我们在这项工作中借助校准的 3-D TCAD 模拟比较并报告了亚 10 纳米节点 SOI 多栅极 FET 中的重离子辐射诱发的单事件瞬态 (SET)。我们的分析包括纳米片 FET (NSFET)、纳米线 FET (NWFET) 和 FinFET，以及基于掺杂分布的两种不同器件设计模式，即反转 (INV) 和无结模式 (JL)。我们还分析了重离子撞击方向和入射角对各种 MuGFET SET 性能的影响。还比较了 NSFET 和 NWFET 的多片/线的重离子感应 SET 电流。除此之外，这项工作还考虑了重离子撞击的不同位置。更多，我们整理了仿真趋势，提出了预测重离子辐射对各种 MuGFET 影响的经验模型。我们的模型包括一些设备设计参数和重离子暴露条件作为模型的输入。所提出的模型与我们在此报告的一组模型参数的 TCAD 仿真结果具有良好的相关性。这些模型不仅可以加快分析速度，而且还可以准确预测重离子辐照下高级 MuGFET 中的 SET。