This paper investigates the impact of different interface trap charges (ITCs) on dual-material gate-oxide-stack double-gate TFET (DMGOSDG-TFET) by introducing localized charges (donor/acceptor) at the interface of semiconductor/insulator. For this, we have observed the effects of different ITCs on both conventional dual material control gate tunnel field effect transistor (DMCG-TFET) and dual-material gate-oxide-stack double-gate TFET with identical dimensions in terms of DC, analog/RF and linearity performance parameters. Both the devices with positive (donor) and negative (acceptor) ITCs, have been simulated using technology computer-aided design (TCAD) tool. To understand the impact of different ITCs on the DC and analog/RF performances, the parameters such as electric field, transfer characteristics, transconductance, parasitic capacitance, $f_{T}$ , GBP and TFP for DMGOSDG-TFET have been analyzed and compared with that of DMCG-TFET. Further, to analyze the effect of different ITCs on the linearity performances, the parameters VIP2, VIP3, IIP3 and IMD3 have been investigated and compared with that of the conventional DMCG-TFET. Simulation results demonstrate that DMGOSDG-TFET is more immune towards different types of ITCs as compared to the conventional DMCG-TFET. Hence, DMGOSDG-TFET is more reliable over the conventional device for ultra low power applications.

中文翻译：

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界面陷阱电荷对双材料栅氧化物叠层双栅 TFET 的模拟/射频和线性性能的影响

本文通过在半导体/绝缘体界面引入局部电荷（施主/受主），研究不同界面陷阱电荷（ITC）对双材料栅氧化物叠层双栅 TFET（DMGOSDG-TFET）的影响。为此，我们观察了不同 ITC 对传统双材料控制栅隧道场效应晶体管 (DMCG-TFET) 和双材料栅氧化物叠层双栅 TFET 的影响，在 DC、模拟/射频和线性性能参数。带有正（供体）和负（受体）ITC 的设备均已使用技术计算机辅助设计 (TCAD) 工具进行模拟。了解不同 ITC 对 DC 和模拟/RF 性能的影响，参数如电场、传输特性、跨导、寄生电容、DMGODG-TFET 的 $f_{T}$ 、GBP 和 TFP 已被分析并与 DMCG-TFET 进行了比较。此外，为了分析不同 ITC 对线性性能的影响，研究了参数 VIP2、VIP3、IIP3 和 IMD3，并与传统 DMCG-TFET 的参数进行了比较。仿真结果表明，与传统的 DMCG-TFET 相比，DMGODG-TFET 对不同类型的 ITC 具有更强的免疫力。因此，对于超低功率应用，DMGODG-TFET 比传统器件更可靠。仿真结果表明，与传统的 DMCG-TFET 相比，DMGODG-TFET 对不同类型的 ITC 具有更强的免疫力。因此，对于超低功率应用，DMGODG-TFET 比传统器件更可靠。仿真结果表明，与传统的 DMCG-TFET 相比，DMGODG-TFET 对不同类型的 ITC 具有更强的免疫力。因此，对于超低功率应用，DMGODG-TFET 比传统器件更可靠。