The effects of high-field stress are evaluated for industrial-quality AlGaN/GaN HEMTs as a function of bias and temperature. Positive and negative threshold voltage shifts are observed, depending on stress conditions, indicating the presence of acceptor-like and donor-like traps in these devices. Worst-case transconductance degradation under rated device operating conditions is observed for devices subjected to high-voltage stress in the ON bias condition at elevated temperature. This contrasts with results on earlier-generation devices, which often show worst-case response under semi-ON bias conditions, emphasizing that each technology requires characterization under multiple bias-stress conditions. Neutral and charged oxygen donor-like DX centers and substitutional acceptor-like $\text{N}_{\mathrm{ Ga}}$ centers are the dominant defects contributing to low-frequency noise in these devices. Dehydrogenation of $\text{O}_{\mathrm{ N}}$ -H complexes during ON-bias stress and the resulting increases in densities of $\text{O}_{\mathrm{ N}}$ -related donor-like defects are evidently the reliability-limiting mechanism in these devices.

中文翻译：

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AlGaN/GaN HEMT 高电压、高温应力的最坏情况偏差

对工业品质的 AlGaN/GaN HEMT 的高场应力影响作为偏置和温度的函数进行评估。观察到正负阈值电压偏移，这取决于应力条件，表明这些器件中存在类受体和类供体陷阱。对于在高温导通偏置条件下承受高压应力的器件，在额定器件工作条件下观察到最坏情况的跨导退化。这与早期器件的结果形成对比，后者通常在半导通偏置条件下表现出最坏情况的响应，强调每种技术都需要在多种偏置应力条件下进行表征。中性和带电氧供体样 DX 中心和替代受体样 $\text{N}_{\mathrm{ Ga}}$ 中心是导致这些设备中低频噪声的主要缺陷。脱氢 $\text{O}_{\mathrm{ N}}$ -H 复合物在 ON 偏置应力和由此导致的密度增加 $\text{O}_{\mathrm{ N}}$ 相关的类施主缺陷显然是这些设备中的可靠性限制机制。