In this letter, a 75.1–151.4-GHz silicon power amplifier (PA) is devised with the help of sandwiched slab transformer, which is proposed to increase the tuning ranges of coupling coefficient, quality factor, and conductivity. Being compact in size and simple in implementation enables it to be well-applied in multiple-way power combination. Based on this device, the fabricated PA in the 130-nm silicon germanium (SiGe) process demonstrates more than 14.1-dB gain at full $W$ -band and 77% of the $D$ -band. From 75 to 117.7 GHz, its measured $P_{\mathrm {sat}}$ is all above 16.8 dBm, while its peak point is 19.8 dBm at 100 GHz with 8.8% PAE.

中文翻译：

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在 W 和 D 波段工作的基于夹层板变压器的 SiGe 功率放大器

在这封信中，在夹层板变压器的帮助下设计了 75.1–151.4-GHz 硅功率放大器 (PA)，建议增加耦合系数、品质因数和电导率的调谐范围。体积小巧，实现简单，可以很好地应用于多路功率组合。基于该器件，在 130 纳米硅锗 (SiGe) 工艺中制造的 PA 显示出超过 14.1 dB 的全功率增益 $W$ -band 和 77% 的 $D$ -乐队。从 75 到 117.7 GHz，其测量 $P_{\mathrm {sat}}$ 均高于 16.8 dBm，而其峰值点在 100 GHz 时为 19.8 dBm，PAE 为 8.8%。