In this letter, a broadband millimeter-wave (mm-wave) continuous-mode Class-F power amplifier (PA) based on the deembedded transistor model is proposed for the fifth-generation (5G) applications. To design the output matching network at the intrinsic current-generator plane, an $S$ -parameter fitting method is proposed to extract the parasitic parameters of nonpackaged transistors over a wide frequency range. The PA is implemented in the 0.13- $\mu \text{m}$ SiGe BiCMOS process, which occupies only 0.42 mm². By controlling the even and odd harmonics impedance, the PA achieves a 78.2% −3-dB small-signal gain fractional bandwidth from 21.1 to 48.2 GHz. The −1-dB $P_{\mathrm {sat}}$ bandwidth covers 21–43 GHz (68.8% fractional bandwidth) and the saturated output powers are 17.2–18.1 dBm. Meanwhile, the designed PA provides a 24.1%–32.1% peak power-added efficiency (PAE) over the band.

中文翻译：

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基于去嵌晶体管模型的宽带毫米波连续模式F类功率放大器

在这封信中，针对第五代 (5G) 应用提出了一种基于去嵌入晶体管模型的宽带毫米波 (mm-wave) 连续模式 F 类功率放大器 (PA)。为了在本征电流发生器平面设计输出匹配网络， $S$ 提出了参数拟合方法来提取非封装晶体管在很宽的频率范围内的寄生参数。PA 在 0.13- $\mu \text{m}$ SiGe BiCMOS 工艺，仅占 0.42 mm ²。通过控制偶次和奇次谐波阻抗，PA 在 21.1 至 48.2 GHz 范围内实现了 78.2% -3-dB 的小信号增益分数带宽。−1-dB $P_{\mathrm {sat}}$ 带宽覆盖 21–43 GHz（68.8% 部分带宽），饱和输出功率为 17.2–18.1 dBm。同时，设计的 PA 在整个频段提供 24.1%–32.1% 的峰值功率附加效率 (PAE)。