Electrically Controlled Spin Injection from Giant Rashba Spin-Orbit Conductor BiTeBr.,Nano Letters

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Electrically Controlled Spin Injection from Giant Rashba Spin-Orbit Conductor BiTeBr.
Nano Letters ( IF 9.6 ) Pub Date : 2020-06-08 , DOI: 10.1021/acs.nanolett.0c00458
Zoltán Kovács-Krausz ₁ , Anamul Md Hoque ₂ , Péter Makk ₁ , Bálint Szentpéteri ₁ , Mátyás Kocsis ₁ , Bálint Fülöp ₁ , Michael Vasilievich Yakushev _{3,

4,

5} , Tatyana Vladimirovna Kuznetsova _{3,

4} , Oleg Evgenevich Tereshchenko _{6,

7,

8} , Konstantin Aleksandrovich Kokh _{6,

8,

9} , István Endre Lukács ₁₀ , Takashi Taniguchi ₁₁ , Kenji Watanabe ₁₁ , Saroj Prasad Dash ₂ , Szabolcs Csonka ₁

Affiliation

Department of Physics, Budapest University of Technology and Economics and Nanoelectronics 'Momentum' Research Group of the Hungarian Academy of Sciences, Budafoki ut 8, 1111 Budapest, Hungary.
Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296, Göteborg, Sweden.
M.N. Miheev Institute of Metal Physics, Ural Branch of the Russian Academy of Science, 620108, Ekaterinburg, Russia.
Ural Federal University, Ekaterinburg, 620002, Russia.
Institute of Solid State Chemistry, Ural Branch of the Russian Academy of Science, Ekaterinburg, 620990, Russia.
St. Petersburg State University, 198504, St. Petersburg, Russia.
A. V. Rzhanov Institute of Semiconductor Physics, 630090, Novosibirsk, Russia.
Novosibirsk State University, 630090, Novosibirsk, Russia.
V. S. Sobolev Institute of Geology and Mineralogy, 630090, Novosibirsk, Russia.
Center for Energy Research, Institute of Technical Physics and Material Science, H-1121 Budapest, Hungary.
National Institute for Material Science, 1-1 Namiki, Tsukuba 305-0044, Japan.

Ferromagnetic materials are the widely used source of spin-polarized electrons in spintronic devices, which are controlled by external magnetic fields or spin-transfer torque methods. However, with increasing demand for smaller and faster spintronic components utilization of spin–orbit phenomena provides promising alternatives. New materials with unique spin textures are highly desirable since all-electric creation and control of spin polarization is expected where the strength, as well as an arbitrary orientation of the polarization, can be defined without the use of a magnetic field. In this work, we use a novel spin–orbit crystal BiTeBr for this purpose. Because of its giant Rashba spin splitting, bulk spin polarization is created at room temperature by an electric current. Integrating BiTeBr crystal into graphene-based spin valve devices, we demonstrate for the first time that it acts as a current-controlled spin injector, opening new avenues for future spintronic applications in integrated circuits.

中文翻译：

巨型 Rashba 自旋轨道导体 BiTeBr 的电控自旋注入。

铁磁材料是自旋电子器件中广泛使用的自旋极化电子源，其由外部磁场或自旋转移矩方法控制。然而，随着对更小、更快的自旋电子元件的需求不断增加，利用自旋轨道现象提供了有希望的替代方案。具有独特自旋纹理的新材料非常受欢迎，因为预计可以在不使用磁场的情况下定义自旋极化的强度和任意方向，从而实现全电创建和控制自旋极化。在这项工作中，我们为此目的使用了一种新型自旋轨道晶体 BiTeBr。由于其巨大的拉什巴自旋分裂，体自旋极化是在室温下由电流产生的。将 BiTeBr 晶体集成到基于石墨烯的自旋阀器件中，我们首次证明它可以作为电流控制的自旋注入器，为未来集成电路中的自旋电子应用开辟新途径。

更新日期：2020-07-08

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