Abstract In this paper, we investigate the effect of thermal annealing on nonradiative recombination parameters of GaAsPN materials used for intermediate band solar cells. This study is performed thanks to photothermal deflection technique PTD. Indeed, nonradiative lifetime, electronics diffusivity, surface and interface recombination, are extracted through a good fit between theoretical and experimental amplitude and phase of PTD signal. Then, the effects of annealing temperature on charge transport were analyzed and discussed. As an important result for solar cells improvement, we have found that hole diffusion length and mobility increases respectively from 13.8 to 19 (±2.5%) μm and from 112 (±4.9%) to 153 (±3.5%) cm2/V·s for GaAsPN as grown to that annealed at 800 °C.

中文翻译：

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用于中带太阳能电池的退火 GaAsPN 材料中载流子扩散长度和迁移率的改进

摘要 在本文中，我们研究了热退火对用于中带太阳能电池的 GaAsPN 材料的非辐射复合参数的影响。这项研究是通过光热偏转技术 PTD 进行的。事实上，非辐射寿命、电子扩散率、表面和界面复合是通过 PTD 信号的理论和实验幅度和相位之间的良好拟合来提取的。然后，分析和讨论了退火温度对电荷传输的影响。作为太阳能电池改进的一个重要结果，我们发现空穴扩散长度和迁移率分别从 13.8 到 19 (±2.5%) μm 和从 112 (±4.9%) 到 153 (±3.5%) cm2/V·s 增加对于生长到 800 °C 退火的 GaAsPN。