To enhance the performance of green light-emitting diodes (LEDs), numerical analysis of structural engineering of conventional LED has been presented. Our proposed structure with composition-graded electron blocking layer as well as thickness-graded last quantum barrier and last quantum well shows improved radiative recombination rate, lower efficiency droop and higher light output power at high current density in comparison to other devices. The observed improvements are because of better electron and hole confinement as well as improved hole transportation inside the active region.

中文翻译：

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通过厚度渐变的最后一个阱/最后一个势垒和成分渐变的电子阻挡层实现绿色 GaN 基发光二极管的高内量子效率

为了提高绿色发光二极管 (LED) 的性能，提出了传统 LED 结构工程的数值分析。与其他器件相比，我们提出的具有成分渐变电子阻挡层以及厚度渐变的最后一个量子势垒和最后一个量子阱的结构在高电流密度下显示出更高的辐射复合率、更低的效率下降和更高的光输出功率。观察到的改进是因为更好的电子和空穴限制以及有源区域内改进的空穴传输。