Herein, we reveal extraordinary enhancements in the photoresponsivities of tin sulfide (SnxSy) grown on SiO2/Si wafers through post-phase transformations induced by electron beam irradiation (EBI) and crystallization. Amorphous SnxSythin films were formed by room-temperature sputtering, and as-deposited films were subsequently transformed into hexagonal SnS2and orthorhombic SnS phases by EBI at 600 and 800 V respectively, for only one minute. The use of a low-energy electron beam was sufficient to fabricate a SnxSyphotodetector, with no additional heating required. Less than 10-nm-thick SnxSyfilms with well-defined layer structures and stable surface morphologies were obtained through EBI at 600 and 800 V. The resulting phase-controlled SnS thin-film photodetector prepared using 800-V EBI exhibited a 40,000-fold increase in photoresponsivity; when illuminated by a 450-nm light source, the active SnS-layer-containing photodetector demonstrated a photoresponsivity of 33.2 mA/W.

中文翻译：

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相控硫化锡薄膜显着增强的光响应性

在此，我们揭示了通过电子束照射 (EBI) 和结晶引起的后相转变在 SiO2/Si 晶片上生长的硫化锡 (SnxSy) 的光响应性的非凡增强。通过室温溅射形成无定形 SnxSythin 薄膜，随后通过 EBI 分别在 600 和 800 V 下将沉积的薄膜转化为六方 SnS2 和正交 SnS 相，时间仅 1 分钟。使用低能电子束足以制造 SnxSy 光电探测器，无需额外加热。通过 EBI 在 600 和 800 V 下获得了小于 10 nm 厚的具有明确层结构和稳定表面形态的 SnxSyfilms。使用 800-V EBI 制备的相控 SnS 薄膜光电探测器表现出 40,000 倍的增加光响应性；