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Cation-Deficiency-Induced Crystal-Site Engineering for ZnGa2O4:Mn2+ Thin Film.
Inorganic Chemistry ( IF 4.3 ) Pub Date : 2020-06-07 , DOI: 10.1021/acs.inorgchem.0c00359
Takuro Dazai 1 , Shintaro Yasui 1 , Tomoyasu Taniyama 1, 2 , Mitsuru Itoh 1
Affiliation  

Zn-deficient spinel-type ZnGa2O4:Mn2+ phosphor thin films were prepared using pulsed laser deposition. With an increase (decrease) in the Zn deficiency (concentration) of the films, changes in lattice constant, optical band gap, and photoluminescence spectra were observed. All films without γ-Ga2O3:Mn showed green luminescence attributable to the transition from the 4T1 state to the 6A1 state. In addition, the spectral shape changed depending on the temperature. The luminescence spectra have two peaks resulting from the Mn2+ ions located in the tetrahedral and octahedral sites. These peaks had different thermal quenching temperatures, which were around 320 and 260 K, respectively. Therefore, the spectral shape changed with increasing temperature. The spectral shape also depended on the Zn concentration. With an increase (decrease) in the Zn concentration (deficiency) of the films, the intensity of emission from Td increased in comparison with that from Oh. Therefore, the position of Mn2+ was controlled by Zn deficiency similarly to the effect of crystal-site engineering.

中文翻译:

ZnGa2O4:Mn2 +薄膜的阳离子缺陷诱导晶体现场工程。

使用脉冲激光沉积来制备缺锌尖晶石型ZnGa 2 O 4:Mn 2+荧光粉薄膜。随着膜中锌缺乏(浓度)的增加(减少),观察到晶格常数,光学带隙和光致发光光谱的变化。无γ -镓所有膜2 ö 3:锰显示绿色的发光归因于从所述的过渡4 Ť 1个状态到61个状态。另外,光谱形状根据温度而变化。发光光谱具有由Mn 2+引起的两个峰离子位于四面体和八面体位置。这些峰具有不同的热淬火温度,分别为320 K和260K。因此,光谱形状随温度升高而变化。光谱形状也取决于Zn浓度。随着膜中锌浓度(缺陷)的增加(减少),T d的发射强度与O h相比增加。因此,Mn 2+的位置受锌缺乏控制,类似于晶体现场工程的效果。
更新日期:2020-07-06
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