In this work, InGaN-based green light-emitting diodes (LEDs) are studied theoretically. We have minimized the problem of asymmetrical carrier distribution in the active region. We have sandwiched the active region between p-AlGaN layers and observed improvement in the device performance. The hole injection, as well as the distribution, is improved remarkably in all the QWs. The asymmetry between the concentrations of electrons and holes in the emission region is reduced in contrast to the conventional structure. The radiative recombination is also enhanced because all the QWs contribute greatly in radiative recombination.

中文翻译：

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通过将有源区与 p-AlGaN 层夹在中间来提高 GaN 基绿色发光二极管的内量子效率

在这项工作中，从理论上研究了基于 InGaN 的绿色发光二极管 (LED)。我们已经最大限度地减少了有源区载流子分布不对称的问题。我们将有源区夹在 p-AlGaN 层之间，并观察到器件性能的改善。在所有 QW 中，空穴注入以及分布都得到了显着改善。与传统结构相比，发射区中电子和空穴浓度之间的不对称性降低。辐射复合也增强了，因为所有 QW 对辐射复合都有很大贡献。