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Enhanced room temperature ammonia gas sensing properties of strontium doped ZnO thin films by cost-effective SILAR method
Materials Science in Semiconductor Processing ( IF 4.1 ) Pub Date : 2020-11-01 , DOI: 10.1016/j.mssp.2020.105117
K. Radhi Devi , G. Selvan , M. Karunakaran , I. Loyola Poul Raj , V. Ganesh , S. AlFaify

Abstract In this present work, pure and Sr doped ZnO films were systematically coated SILAR method is debated. The influence of Sr doping content on microstructure, surface morphology, elemental composition, photoluminescence and ammonia vapor sensing properties of these coated films were analyzed before and after incorporation of Sr. The effect of Sr doping revealed a change in crystal orientation from the (0 0 2) to the (1 0 1). SEM analysis reveals the formation of flower-like morphology formed by a number of nanowires with doping concentration. With the increase in Sr concentration, the bandgap values are increased from 3.02 to 3.20 eV. The addition of Sr also induces a rapid response towards ammonia gas sensing.

中文翻译:

通过具有成本效益的 SILAR 方法增强掺锶 ZnO 薄膜的室温氨气传感性能

摘要 在目前的工作中,对纯的和掺杂 Sr 的 ZnO 薄膜系统地涂覆 SILAR 方法进行了辩论。在掺入 Sr 之前和之后分析了 Sr 掺杂含量对这些涂层薄膜的微观结构、表面形貌、元素组成、光致发光和氨蒸气传感性能的影响。 Sr 掺杂的影响揭示了晶体取向从 (0 0 2) 到 (1 0 1)。SEM 分析揭示了由许多掺杂浓度的纳米线形成的花状形态的形成。随着 Sr 浓度的增加,带隙值从 3.02 eV 增加到 3.20 eV。Sr 的添加还引起了对氨气传感的快速响应。
更新日期:2020-11-01
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