Ce₂(Zr_0.94Sn_0.06)₃(MoO₄)₉ (CZSM) ceramics were synthesized via a traditional solid-state method. The effects of Sn-substitution on phase composition, microstructure, and microwave dielectric properties as a function of sintering temperature were discussed. The XRD results indicated that all the samples exhibited a single phase. The chemical bonds of CZSM ceramics were calculated based on P-V-L theory, which could be used to evaluate the relationship between structure and microwave dielectric properties. The tendency of dielectric constant was depended on the theoretical dielectric polarizability and bond ionicity. Moreover, the improvement of Q·f value was ascribed to the increase of packing fraction. The reduced τ_f value could be explained by decrease of the bond energy, enhanced the co-efficient of thermal expansion and increase of bond valence (V_Zr(Sn)). The complex permittivity values were obtained from infrared reflectivity spectra. The dielectric permittivity and loss were 10.92 and 3.08 × 10⁻⁴, respectively, which agreed well with the measured value. Typically, the optimal microwave dielectric properties of ε_r = 10.35, Q·f = 59,660 GHz (at 9.70 GHz), and τ_f = −7.52 ppm/°C were achieved in CZSM ceramics sintered at 800°C for 6 h.

通过传统的固态方法合成了Ce ₂（Zr _0. 94Sn _0.06）₃（MoO ₄）₉（CZSM）陶瓷。讨论了Sn替代对相组成，微观结构和微波介电性能随烧结温度的影响。XRD结果表明所有样品均表现出单相。基于PVL理论计算了CZSM陶瓷的化学键，可用于评估结构与微波介电性能之间的关系。介电常数的趋势取决于理论介电极化率和键离子性。而且，改善问·F该值归因于包装分数的增加。减少的τ_F 值可以通过降低键能，提高热膨胀系数和提高键合价来解释（V_Zr（Sn））。复介电常数值是从红外反射光谱获得的。介电常数和损耗分别为10.92和3.08×10 ^-4，与测量值非常吻合。通常，ε的最佳微波介电特性_[R = 10.35， 问·F = 59,660 GHz（在9.70 GHz时），τ_F 在800°C烧结6 h的CZSM陶瓷中，获得= -7.52 ppm /°C。