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External Quantum Efficiency of 6.5% at 300 nm Emission and 4.7% at 310 nm Emission on Bare Wafer of AlGaN-Based UVB LEDs
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2020-06-06 , DOI: 10.1021/acsaelm.0c00172 M. Ajmal Khan 1, 2 , Yuri Itokazu 1 , Noritoshi Maeda 1 , Masafumi Jo 1 , Yoichi Yamada 3 , Hideki Hirayama 1, 2
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2020-06-06 , DOI: 10.1021/acsaelm.0c00172 M. Ajmal Khan 1, 2 , Yuri Itokazu 1 , Noritoshi Maeda 1 , Masafumi Jo 1 , Yoichi Yamada 3 , Hideki Hirayama 1, 2
Affiliation
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As per the Minamata Convention on Mercury, regulation on mercury use will be stricter from the year of 2020, and safe AlGaN-based ultraviolet (UV) light sources are urgently needed for killing SARS-CoV-2 (corona virus). AlGaN-based ultraviolet-B (UVB) light-emitting diodes (LEDs) and UVB laser diodes (LDs) have the potential to replace toxic mercury UV lamps. Previously, the internal-quantum-efficiency (ηint) was enhanced from 47 to 54% in AlGaN UVB multiquantum wells (MQWs). However, some nonlinear behaviors in both light output power (L) and external quantum efficiency (ηext) in the 310 nm band UVB LEDs were observed, and later on, such nonlinearities were overcome by reducing the thicknesses of quantum well barriers (TQWB) in MQWs. After relaxing the n-AlGaN electron injection layer up to 50% underneath the MQWs and using a highly reflective Ni/Al p-electrode, L and ηext of the 310 nm band UVB LED were greatly improved from 12 mW and 2.3% to record values of 29 mW and 4.7%, respectively. Similarly, for the 294 nm band UVB LED, ηext and L values, respectively, were also remarkably improved up to 6.5% and 32 mW at room temperature under bare wafer conditions using a better carrier confinement scheme in the MQWs as well as using a moderately Mg-doped p-type multiquantum-barrier electron-blocking layer (p-MQB EBL). The moderately doped p-MQB EBL was used to achieve better hole transport to enhance the hole injection toward the MQWs as well as to block the high-energy electron from overshooting. Possible explanations and recommendations for the improvements in the performances of 294–310 nm UVB LEDs are broadly discussed. Most importantly, such controllable multi-UVB-wavelength emitters may extend nitride-based LEDs to previously inaccessible areas, for example, electrically pumped AlGaN-based UVB LDs.
中文翻译：
基于AlGaN的UVB LED的裸片在300 nm发射时的外部量子效率为6.5％，在310 nm发射时的外部量子效率为4.7％
根据《水am汞公约》，从2020年起，对汞使用的监管将更加严格，并且迫切需要安全的基于AlGaN的紫外线（UV）光源来杀死SARS-CoV-2（日冕病毒）。基于AlGaN的紫外线B（UVB）发光二极管（LED）和紫外线B激光二极管（LD）具有取代有毒汞紫外线灯的潜力。此前，内部量子效率（η INT）中的溶液增强的从47到AlGaN中UVB多量子阱（MQW）54％。然而，在310 nm波段的UVB LED中，观察到了光输出功率（L）和外部量子效率（ηext）的一些非线性行为，随后，通过减小量子阱势垒（T QWB）的厚度克服了这种非线性。）。放宽n型AlGaN电子注入层到多量子阱下方的50％，并使用高反射性的Ni / Al的p电极，之后大号和η EXT的310纳米波段UVB LED被大大从12毫瓦和2.3％至记录改善值分别为29 mW和4.7％。同样，对于294 nm波段的UVB LED，ηext和L在MQWs中使用更好的载流子限制方案以及使用中等Mg掺杂的p型多量子势垒电子阻挡层，在裸露的晶圆条件下，室温下的电阻值也分别显着提高至6.5％和32 mW。 （p-MQB EBL）。中度掺杂的p-MQB EBL用于实现更好的空穴传输，以增强向MQW的空穴注入，并阻止高能电子超调。广泛讨论了294-310 nm UVB LED性能改进的可能解释和建议。最重要的是，这种可控的多UVB波长发射器可以将基于氮化物的LED延伸到以前难以接近的区域，例如，电泵浦的基于AlGaN的UVB LD。
更新日期：2020-07-28
中文翻译：
基于AlGaN的UVB LED的裸片在300 nm发射时的外部量子效率为6.5％，在310 nm发射时的外部量子效率为4.7％
根据《水am汞公约》，从2020年起，对汞使用的监管将更加严格，并且迫切需要安全的基于AlGaN的紫外线（UV）光源来杀死SARS-CoV-2（日冕病毒）。基于AlGaN的紫外线B（UVB）发光二极管（LED）和紫外线B激光二极管（LD）具有取代有毒汞紫外线灯的潜力。此前，内部量子效率（η INT）中的溶液增强的从47到AlGaN中UVB多量子阱（MQW）54％。然而，在310 nm波段的UVB LED中，观察到了光输出功率（L）和外部量子效率（ηext）的一些非线性行为，随后，通过减小量子阱势垒（T QWB）的厚度克服了这种非线性。）。放宽n型AlGaN电子注入层到多量子阱下方的50％，并使用高反射性的Ni / Al的p电极，之后大号和η EXT的310纳米波段UVB LED被大大从12毫瓦和2.3％至记录改善值分别为29 mW和4.7％。同样，对于294 nm波段的UVB LED，ηext和L在MQWs中使用更好的载流子限制方案以及使用中等Mg掺杂的p型多量子势垒电子阻挡层，在裸露的晶圆条件下，室温下的电阻值也分别显着提高至6.5％和32 mW。 （p-MQB EBL）。中度掺杂的p-MQB EBL用于实现更好的空穴传输，以增强向MQW的空穴注入，并阻止高能电子超调。广泛讨论了294-310 nm UVB LED性能改进的可能解释和建议。最重要的是，这种可控的多UVB波长发射器可以将基于氮化物的LED延伸到以前难以接近的区域，例如，电泵浦的基于AlGaN的UVB LD。
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