Thin‐film transistors (TFTs) based on amorphous indium‐gallium‐zinc oxide channels with or without fluorination were fabricated. The sensitivity of their electrical characteristics to hydrogen exposure was compared. It is shown that TFTs built with fluorinated channels exhibit significantly improved intrinsic resistance against hydrogen‐induced degradation; hence, they are potentially better suited for integration with hydrogen‐containing devices such as photo‐diodes based on amorphous hydrogenated silicon and TFTs based on low‐temperature polycrystalline silicon. The observed improvement correlates well with a reduced population of oxygen‐related defects and reduced hydrogen incorporation in the fluorinated channels.

中文翻译：

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氟化铟镓锌氧化物薄膜晶体管，对氢致降解的敏感性降低

制作了具有或不具有氟化作用的基于非晶铟镓锌氧化物通道的薄膜晶体管（TFT）。比较了它们的电特性对氢暴露的敏感性。结果表明，带有氟化通道的TFT表现出显着提高的抗氢降解性能。因此，它们可能更适合与含氢器件集成，例如基于非晶态氢化硅的光电二极管和基于低温多晶硅的TFT。观察到的改善与减少的与氧气有关的缺陷数量和减少的氟化通道中的氢结合密切相关。