ABSTRACT Colloidal quantum dots (QDs) are emerging as one of the most promising candidates due to their unique optical and physical properties. Solution-processed QD-based light-emitting diodes (QLEDs) have been extensively studied and developed for next-generation displays and solid-state lighting. The most practical approach to improve device performance is to optimize charge transport and charge balance in the recombination region. Here, we applied polyethylenimine ethoxylated (PEIE) with low-work function modifiers on top of the quantum dot emissive layer to reach a better charge balance and devices was characterized. Our QLED with a 5.4 nm PEIE layer exhibited a maximum luminance of 41,440 cd/m2 and current efciency of 4.9 cd/A, which are signifcantly more than 2.3 times greater than that of QLED without PEIE.

中文翻译：

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具有聚乙烯亚胺乙氧基化改性发射层的高性能量子点发光二极管

摘要 胶体量子点（QD）由于其独特的光学和物理特性而成为最有前途的候选材料之一。溶液处理的基于 QD 的发光二极管 (QLED) 已被广泛研究和开发用于下一代显示器和固态照明。提高器件性能最实用的方法是优化复合区域中的电荷传输和电荷平衡。在这里，我们在量子点发射层的顶部应用了具有低功函数改性剂的聚乙烯亚胺乙氧基化 (PEIE)，以达到更好的电荷平衡，并对器件进行了表征。我们具有 5.4 nm PEIE 层的 QLED 的最大亮度为 41,440 cd/m2，电流效率为 4.9 cd/A，比没有 PEIE 的 QLED 高出 2.3 倍以上。