Abstract The interface, optical and electrical properties of InGaN light emitting diodes (LEDs) with different H2 flow treatment during the barrier growth are investigated in this study. With H2 treatment, the interface between the quantum well and barrier becomes rougher and the photoluminescence intensity decreases. The external quantum efficiency of the LEDs with 600 sccm (2.7%) H2 treatment has the best performance among the samples. Both the forward and reverse leakage currents of the samples are reduced significantly when treated with H2. Among the samples, a H2 flow with 600 sccm (2.7%) gives the best performance.

中文翻译：

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势垒中H2处理对InGaN发光二极管界面、光学和电学性能的影响

摘要 本研究研究了在势垒生长过程中采用不同 H2 流处理的 InGaN 发光二极管 (LED) 的界面、光学和电学特性。通过 H2 处理，量子阱和势垒之间的界面变得更粗糙，并且光致发光强度降低。600 sccm (2.7%) H2 处理的 LED 的外量子效率在样品中表现最佳。当用 H2 处理时，样品的正向和反向泄漏电流均显着降低。在这些样品中，600 sccm (2.7%) 的 H2 流量提供了最佳性能。