Literatures reports that intrinsic Ga₂O₃ shows negligible response to UV wavelength longer than its optical absorption edge. Herein, we demonstrate for the first time the enhanced response of Ga₂O₃ to UV light with wavelength significantly longer than its optical absorption edge $\le$280 nm. The responsivity of the photodetector reached 38.161 A/W and detectivity of 8.3916 $\times$ ${10}^9$ Jones when the bias voltage was increased to 3 V for 365 nm light illumination. X-ray diffraction measurement confirmed mixed-phase β- $\alpha$ Ga₂O₃ with high crystallinity. Microstructural observation revealed nanoplates-like morphology, showing the high crystallization of the nanocrystals. Optical reflectance measurement showed optical bandgap of 4.67 eV which is typical of β-Ga₂O₃. The sensitivity of the wide bandgap semiconductor material to wavelength longer than its absorption edge could be ascribed to the high crystallinity, film density and net oxygen vacancies on the film.

文献报道，固有的Ga ₂ O ₃对UV波长的响应可以忽略不计，比其光吸收边缘更长。在此，我们首次证明了Ga ₂ O ₃对波长明显长于其光吸收边缘的紫外线的增强响应$\le$280纳米 光电探测器的响应度达到38.161 A / W，探测率达到8.3916$\times$ ${10}^9$琼斯在365 nm光照下将偏置电压提高到3 V时。X射线衍射测量证实混合相β-$\alpha$具有高结晶度的Ga ₂ O ₃。显微组织观察显示出纳米板状形态，显示出纳米晶体的高度结晶。光学反射率测量显示4.67电子伏特这是典型的β-Ga的光学带隙₂ ö ₃。宽带隙半导体材料对于波长长于其吸收边缘的波长的敏感性可以归因于膜上的高结晶度，膜密度和净氧空位。